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SQ2364EES-T1_GE3

  • SQ2364EES-T1_GE3
  • SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 240mOhm @ 2A, 4.5V ±8V 330pF @ 25V 2.5nC @ 4.5V 60V TO-236-3, SC-59, SOT-23-3

SOT-23

SQ2364EES-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
SQ2364EES-T1_GE3 Product Details

SQ2364EES-T1_GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 330pF @ 25V maximal input capacitance.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4.5V).

SQ2364EES-T1_GE3 Features


a 60V drain to source voltage (Vdss)


SQ2364EES-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQ2364EES-T1_GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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