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SQD50N04-09H-GE3

SQD50N04-09H-GE3

SQD50N04-09H-GE3

Vishay Siliconix

MOSFET N-CH 40V 50A TO252

SOT-23

SQD50N04-09H-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Packaging Cut Tape (CT)
Published 2011
Series TrenchFET®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 83W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 14ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 3.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 76 mJ
Nominal Vgs 3.8 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.091478 $1.091478
10 $1.029696 $10.29696
100 $0.971411 $97.1411
500 $0.916426 $458.213
1000 $0.864552 $864.552

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