BDX53A-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.There is no device package available from the supplier for this product.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
BDX53A-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BDX53A-S Applications
There are a lot of Bourns Inc. BDX53A-S applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
