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2N6431

2N6431

2N6431

Central Semiconductor

1 Elements 3 Terminations TO-18 Bulk

SOT-23

2N6431 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Package / Case TO-18
Number of Pins 3
Packaging Bulk
Published 2001
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Terminal Position BOTTOM
Terminal Form WIRE
Frequency 50MHz
Number of Elements 1
Polarity NPN
Power Dissipation-Max 500mW
Element Configuration Single
Power Dissipation 1.8W
Frequency (Max) 50MHz
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 25
DC Current Gain-Min (hFE) 50
Continuous Collector Current 450mA
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $2.21760 $4.4352
2N6431 Product Details

2N6431 Overview


Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Single BJT transistor is recommended to keep the continuous collector voltage at 450mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

2N6431 Features


a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 6V
a transition frequency of 50MHz


2N6431 Applications


There are a lot of Central Semiconductor
2N6431 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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