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MJE15030G

MJE15030G

MJE15030G

ON Semiconductor

MJE15030G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE15030G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 150V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 2V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.62000 $1.62
50 $1.38160 $69.08
100 $1.14220 $114.22
500 $0.95076 $475.38
1,000 $0.75924 $0.75924
MJE15030G Product Details

MJE15030G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 2V DC current gain.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.30MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 8A volts.

MJE15030G Features


the DC current gain for this device is 20 @ 4A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 30MHz

MJE15030G Applications


There are a lot of ON Semiconductor MJE15030G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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