MJE15030G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE15030G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
150V
Max Power Dissipation
50W
Peak Reflow Temperature (Cel)
260
Current Rating
8A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 2V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
150V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.62000
$1.62
50
$1.38160
$69.08
100
$1.14220
$114.22
500
$0.95076
$475.38
1,000
$0.75924
$0.75924
MJE15030G Product Details
MJE15030G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 2V DC current gain.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.30MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 8A volts.
MJE15030G Features
the DC current gain for this device is 20 @ 4A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 8A a transition frequency of 30MHz
MJE15030G Applications
There are a lot of ON Semiconductor MJE15030G applications of single BJT transistors.