2SA1416S-TD-E Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 40mA, 400mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.A transition frequency of 120MHz is present in the part.A breakdown input voltage of 100V volts can be used.A maximum collector current of 1A volts is possible.

2SA1416S-TD-E Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz

2SA1416S-TD-E Applications

There are a lot of ON Semiconductor 2SA1416S-TD-E applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter