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ZXT10N20DE6TA

ZXT10N20DE6TA

ZXT10N20DE6TA

Diodes Incorporated

ZXT10N20DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT10N20DE6TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3.5A
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT10N20D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 100mA, 3.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage 190mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3.5A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.279200 $1.2792
10 $1.206792 $12.06792
100 $1.138483 $113.8483
500 $1.074041 $537.0205
1000 $1.013246 $1013.246
ZXT10N20DE6TA Product Details

ZXT10N20DE6TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2A 2V.The collector emitter saturation voltage is 190mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 3.5A.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3.5A for this device.A transition frequency of 140MHz is present in the part.Breakdown input voltage is 20V volts.Collector current can be as low as 3.5A volts at its maximum.

ZXT10N20DE6TA Features


the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 250mV @ 100mA, 3.5A
the emitter base voltage is kept at 5V
the current rating of this device is 3.5A
a transition frequency of 140MHz

ZXT10N20DE6TA Applications


There are a lot of Diodes Incorporated ZXT10N20DE6TA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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