2SB1216S-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 500mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 6V, an efficient operation can be achieved.There is a transition frequency of 130MHz in the part.A maximum collector current of 4A volts can be achieved.
2SB1216S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2SB1216S-TL-E Applications
There are a lot of ON Semiconductor 2SB1216S-TL-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
