2SCR523EBTL Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 350MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2SCR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523EBTL Applications
There are a lot of ROHM Semiconductor 2SCR523EBTL applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
