2SA1037AKT146S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1037AKT146S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount, Through Hole
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-150mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1037
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
120
Continuous Collector Current
-150mA
VCEsat-Max
0.5 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.044129
$0.044129
500
$0.032448
$16.224
1000
$0.027040
$27.04
2000
$0.024807
$49.614
5000
$0.023184
$115.92
10000
$0.021567
$215.67
15000
$0.020858
$312.87
50000
$0.020509
$1025.45
2SA1037AKT146S Product Details
2SA1037AKT146S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Continuous collector voltage should be kept at -150mA for high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -150mA.Parts of this part have transition frequencies of 140MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
2SA1037AKT146S Features
the DC current gain for this device is 120 @ 1mA 6V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at -6V the current rating of this device is -150mA a transition frequency of 140MHz
2SA1037AKT146S Applications
There are a lot of ROHM Semiconductor 2SA1037AKT146S applications of single BJT transistors.