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2N3583 PBFREE

  • 2N3583 PBFREE
  • 2N3583 PBFREE

2N3583 PBFREE

2N3583 PBFREE

Central Semiconductor Corp

2N3583 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3583 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Operating Temperature -65°C~200°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 35W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 10V
Current - Collector Cutoff (Max) 10mA
Vce Saturation (Max) @ Ib, Ic 5V @ 125mA, 1A
Voltage - Collector Emitter Breakdown (Max) 175V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 10MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.91000 $13.91
500 $13.7709 $6885.45
1000 $13.6318 $13631.8
1500 $13.4927 $20239.05
2000 $13.3536 $26707.2
2500 $13.2145 $33036.25
2N3583 PBFREE Product Details

2N3583 PBFREE Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 125mA, 1A.Device displays Collector Emitter Breakdown (175V maximal voltage).

2N3583 PBFREE Features


the DC current gain for this device is 40 @ 500mA 10V
the vce saturation(Max) is 5V @ 125mA, 1A

2N3583 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3583 PBFREE applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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