PBSS4041PX,115 Overview

In this device, the DC current gain is 150 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 300mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

PBSS4041PX,115 Features

the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 300mV @ 500mA, 5A
the emitter base voltage is kept at -5V

PBSS4041PX,115 Applications

There are a lot of Nexperia USA Inc. PBSS4041PX,115 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting