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KSD880YTU

KSD880YTU

KSD880YTU

ON Semiconductor

KSD880YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD880YTU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 30W
Current Rating 3A
Frequency 3MHz
Base Part Number KSD880
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
Height 14.2mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.74000 $0.74
10 $0.65300 $6.53
100 $0.50080 $50.08
500 $0.39586 $197.93
KSD880YTU Product Details

KSD880YTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 5V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 300mA, 3A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.In the part, the transition frequency is 3MHz.Maximum collector currents can be below 3A volts.

KSD880YTU Features


the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz

KSD880YTU Applications


There are a lot of ON Semiconductor KSD880YTU applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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