2SCR586D3FRATL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SCR586D3FRATL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
10W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.736000
$1.736
10
$1.637736
$16.37736
100
$1.545034
$154.5034
500
$1.457579
$728.7895
1000
$1.375075
$1375.075
2SCR586D3FRATL Product Details
2SCR586D3FRATL Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SCR586D3FRATL Features
the DC current gain for this device is 120 @ 500mA 3V the vce saturation(Max) is 300mV @ 100mA, 2A
2SCR586D3FRATL Applications
There are a lot of ROHM Semiconductor 2SCR586D3FRATL applications of single BJT transistors.