2SCR586D3FRATL Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SCR586D3FRATL Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 300mV @ 100mA, 2A
2SCR586D3FRATL Applications
There are a lot of ROHM Semiconductor 2SCR586D3FRATL applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver