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2SCR586D3FRATL

2SCR586D3FRATL

2SCR586D3FRATL

ROHM Semiconductor

2SCR586D3FRATL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR586D3FRATL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.736000 $1.736
10 $1.637736 $16.37736
100 $1.545034 $154.5034
500 $1.457579 $728.7895
1000 $1.375075 $1375.075
2SCR586D3FRATL Product Details

2SCR586D3FRATL Overview


This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2SCR586D3FRATL Features


the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 300mV @ 100mA, 2A

2SCR586D3FRATL Applications


There are a lot of ROHM Semiconductor 2SCR586D3FRATL applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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