KSB546YTU Overview

This device has a DC current gain of 120 @ 400mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The maximum collector current is 2A volts.

KSB546YTU Features

the DC current gain for this device is 120 @ 400mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 5MHz

KSB546YTU Applications

There are a lot of ON Semiconductor KSB546YTU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting