NSS1C301ET4G Overview
In this device, the DC current gain is 120 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 115mV.A VCE saturation (Max) of 250mV @ 300mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 3A for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, the part has a transition frequency of 120MHz.As a result, it can handle voltages as low as 100V volts.In extreme cases, the collector current can be as low as 3A volts.
NSS1C301ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
NSS1C301ET4G Applications
There are a lot of ON Semiconductor NSS1C301ET4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
