2N3702 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3702 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Packaging
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50μA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
25V
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.488974
$0.488974
10
$0.461296
$4.61296
100
$0.435185
$43.5185
500
$0.410552
$205.276
1000
$0.387313
$387.313
2N3702 PBFREE Product Details
2N3702 PBFREE Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 50μA 5V.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.
2N3702 PBFREE Features
the DC current gain for this device is 60 @ 50μA 5V
2N3702 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3702 PBFREE applications of single BJT transistors.