2N3707 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3707 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
30V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.978941
$0.978941
10
$0.923529
$9.23529
100
$0.871254
$87.1254
500
$0.821938
$410.969
1000
$0.775413
$775.413
2N3707 PBFREE Product Details
2N3707 PBFREE Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1mA 5V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3707 PBFREE Features
the DC current gain for this device is 100 @ 1mA 5V
2N3707 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3707 PBFREE applications of single BJT transistors.