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BCW66GR

  • BCW66GR
  • BCW66GR

BCW66GR

BCW66GR

Nexperia USA Inc.

BCW66GR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW66GR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.050448 $0.050448
500 $0.037094 $18.547
1000 $0.030912 $30.912
2000 $0.028360 $56.72
5000 $0.026504 $132.52
10000 $0.024654 $246.54
15000 $0.023844 $357.66
50000 $0.023446 $1172.3
BCW66GR Product Details

BCW66GR Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BCW66GR Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW66GR Applications


There are a lot of Nexperia USA Inc. BCW66GR applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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