PHPT60406NYX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PHPT60406NYX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Supplier Device Package
LFPAK56, Power-SO8
Operating Temperature
175°C TJ
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.35W
Polarity
NPN
Power - Max
1.35W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
380mV
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
230 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
380mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
6A
Max Breakdown Voltage
40V
Frequency - Transition
153MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.148180
$1.14818
10
$1.083189
$10.83189
100
$1.021876
$102.1876
500
$0.964034
$482.017
1000
$0.909466
$909.466
PHPT60406NYX Product Details
PHPT60406NYX Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 230 @ 500mA 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 380mV @ 300mA, 6A.There is a breakdown input voltage of 40V volts that it can take.LFPAK56, Power-SO8 is the supplier device package for this product.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 6A volts.
PHPT60406NYX Features
the DC current gain for this device is 230 @ 500mA 2V the vce saturation(Max) is 380mV @ 300mA, 6A the supplier device package of LFPAK56, Power-SO8
PHPT60406NYX Applications
There are a lot of Nexperia USA Inc. PHPT60406NYX applications of single BJT transistors.