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DZT2907A-13

DZT2907A-13

DZT2907A-13

Diodes Incorporated

DZT2907A-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DZT2907A-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Type General Purpose
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1.5W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DZT2907A
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.5W
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage-1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -5V
hFE Min 50
Continuous Collector Current -600mA
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:21081 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.301394$0.301394
10$0.284334$2.84334
100$0.268240$26.824
500$0.253057$126.5285
1000$0.238733$238.733

DZT2907A-13 Product Details

DZT2907A-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.A -600mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Breakdown input voltage is 60V volts.A maximum collector current of 600mA volts is possible.

DZT2907A-13 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DZT2907A-13 Applications


There are a lot of Diodes Incorporated DZT2907A-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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