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2N5682

2N5682

2N5682

ON Semiconductor

2N5682 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N5682 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5682
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 1A
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.75000 $0.75
500 $0.7425 $371.25
1000 $0.735 $735
1500 $0.7275 $1091.25
2000 $0.72 $1440
2500 $0.7125 $1781.25
2N5682 Product Details

2N5682 Description


The 2N5682 from ON Semiconductor is an NPN silicon planer epitaxial Metal Transistor intended for use as a driver for high-power transistors in general-purpose amplifiers and switching circuits.



2N5682 Features


  • NPN silicon planer epitaxial Metal Transistor

  • 12-month limited warranty *view Terms & Conditions for details

  • 96% of customers would recommend to a friend



2N5682 Applications


  • Industrial, Power Management


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