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CBCP69 TR PBFREE

CBCP69 TR PBFREE

CBCP69 TR PBFREE

Central Semiconductor Corp

CBCP69 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CBCP69 TR PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration Single
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 1A
Transition Frequency 65MHz
Frequency - Transition 65MHz
Power Dissipation-Max (Abs) 2W
RoHS StatusROHS3 Compliant
In-Stock:17839 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.43000$0.43
500$0.4257$212.85
1000$0.4214$421.4
1500$0.4171$625.65
2000$0.4128$825.6
2500$0.4085$1021.25

CBCP69 TR PBFREE Product Details

CBCP69 TR PBFREE Overview


In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

CBCP69 TR PBFREE Features


the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
a transition frequency of 65MHz

CBCP69 TR PBFREE Applications


There are a lot of Central Semiconductor Corp CBCP69 TR PBFREE applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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