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JANTXV2N3635L

  • JANTXV2N3635L
  • JANTXV2N3635L

JANTXV2N3635L

JANTXV2N3635L

Microsemi Corporation

JANTXV2N3635L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3635L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/357
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 650ns
Turn On Time-Max (ton) 200ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $18.58080 $1858.08
JANTXV2N3635L Product Details

JANTXV2N3635L Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Maximum collector currents can be below 1A volts.

JANTXV2N3635L Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V

JANTXV2N3635L Applications


There are a lot of Microsemi Corporation JANTXV2N3635L applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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