50A02SS-TL-E Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 120mV @ 10mA, 100mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.An input voltage of 50V volts is the breakdown voltage.The maximum collector current is 400mA volts.
50A02SS-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V
the vce saturation(Max) is 120mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
50A02SS-TL-E Applications
There are a lot of ON Semiconductor 50A02SS-TL-E applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
