PBSS4021PX,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 4A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 265mV @ 345mA, 6.9A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 6.2A volts at Single BJT transistors maximum.

PBSS4021PX,115 Features

the DC current gain for this device is 150 @ 4A 2V
the vce saturation(Max) is 265mV @ 345mA, 6.9A
the emitter base voltage is kept at -5V

PBSS4021PX,115 Applications

There are a lot of Nexperia USA Inc. PBSS4021PX,115 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting