2DA1213O-13 Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.160MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.
2DA1213O-13 Features
the DC current gain for this device is 70 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
2DA1213O-13 Applications
There are a lot of Diodes Incorporated 2DA1213O-13 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
