Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NJL3281DG

NJL3281DG

NJL3281DG

ON Semiconductor

NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJL3281DG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-264-5
Surface Mount NO
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 260V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 5
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 260V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 5A 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 10A
Collector Emitter Breakdown Voltage 260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 3V
Max Breakdown Voltage 260V
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 25.98mm
Length 19.89mm
Width 4.89mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.25000 $5.25
25 $4.45520 $111.38
100 $3.86100 $386.1
500 $3.28680 $1643.4
NJL3281DG Product Details

NJL3281DG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 5A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 260V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

NJL3281DG Features


the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz

NJL3281DG Applications


There are a lot of ON Semiconductor NJL3281DG applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

Related Part Number

SMMBT2222ALT1G
MJD32T4G
MJD32T4G
$0 $/piece
ZTX956STZ
PMBTA42,185
MJE5852G
MJE5852G
$0 $/piece
BC848BWT106
ZXTP722MATA

Get Subscriber

Enter Your Email Address, Get the Latest News