NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJL3281DG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-264-5
Surface Mount
NO
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
260V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
260
Current Rating
15A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
5
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
260V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 5A 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 10A
Collector Emitter Breakdown Voltage
260V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
3V
Max Breakdown Voltage
260V
Collector Base Voltage (VCBO)
260V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
Height
25.98mm
Length
19.89mm
Width
4.89mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.25000
$5.25
25
$4.45520
$111.38
100
$3.86100
$386.1
500
$3.28680
$1643.4
NJL3281DG Product Details
NJL3281DG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 5A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 260V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
NJL3281DG Features
the DC current gain for this device is 75 @ 5A 5V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 1A, 10A the emitter base voltage is kept at 5V the current rating of this device is 15A a transition frequency of 30MHz
NJL3281DG Applications
There are a lot of ON Semiconductor NJL3281DG applications of single BJT transistors.