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NJL3281DG

NJL3281DG

NJL3281DG

ON Semiconductor

NJL3281DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJL3281DG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-264-5
Surface MountNO
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 260V
Max Power Dissipation200W
Peak Reflow Temperature (Cel) 260
Current Rating15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count5
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 260V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 5A 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 10A
Collector Emitter Breakdown Voltage260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage3V
Max Breakdown Voltage 260V
Collector Base Voltage (VCBO) 260V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 25.98mm
Length 19.89mm
Width 4.89mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1361 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.25000$5.25
25$4.45520$111.38
100$3.86100$386.1
500$3.28680$1643.4

NJL3281DG Product Details

NJL3281DG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 5A 5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.There is a transition frequency of 30MHz in the part.Breakdown input voltage is 260V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

NJL3281DG Features


the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 30MHz

NJL3281DG Applications


There are a lot of ON Semiconductor NJL3281DG applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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