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SMMBT2222ALT1G

  • SMMBT2222ALT1G
  • SMMBT2222ALT1G

SMMBT2222ALT1G

SMMBT2222ALT1G

ON Semiconductor

SMMBT2222ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBT2222ALT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number MMBT2222A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Power - Max 225mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Turn Off Time-Max (toff) 285ns
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.28000 $0.28
500 $0.2772 $138.6
1000 $0.2744 $274.4
1500 $0.2716 $407.4
2000 $0.2688 $537.6
2500 $0.266 $665
SMMBT2222ALT1G Product Details

SMMBT2222ALT1G Description

 

SMMBT2222ALT1G transistor is a two-way transistor controlled by current. Comparatively the Field-effect transistors these bipolar transistors have slower switching speeds, their input impedance is very low and the power consumption is significant. On Semiconductor SMMBT2222ALT1G is widely used in television, broadcasting communications radar, computers, electronic devices for automatic control as well as household appliances as well as many other fields.

 

SMMBT2222ALT1G Features

 

Low rDS(on) Provides Higher Efficiency and Extends Battery Life

Miniature Package Saves Board Space

Pb-Free Package is Available

Automotive and Other Applications

PPAP Capable

 

 

SMMBT2222ALT1G Applications

 

Television

Broadcasting communications

Radar

Computers

Household appliances

 


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