CP191V-2N2222A-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP191V-2N2222A-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
800mA
Frequency - Transition
300MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$152.25000
$152.25
10
$144.90000
$1449
25
$140.00000
$3500
CP191V-2N2222A-CT20 Product Details
CP191V-2N2222A-CT20 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package Die comes with the product.This device displays a 40V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
CP191V-2N2222A-CT20 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the supplier device package of Die
CP191V-2N2222A-CT20 Applications
There are a lot of Central Semiconductor Corp CP191V-2N2222A-CT20 applications of single BJT transistors.