BUJ403A/DG,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ403A/DG,127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Power - Max
100W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max)
550V
Current - Collector (Ic) (Max)
6A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BUJ403A/DG,127 Product Details
BUJ403A/DG,127 Overview
This device has a DC current gain of 20 @ 500mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 400mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A 550V maximal voltage - Collector Emitter Breakdown is present in the device.
BUJ403A/DG,127 Features
the DC current gain for this device is 20 @ 500mA 5V the vce saturation(Max) is 1V @ 400mA, 2A
BUJ403A/DG,127 Applications
There are a lot of WeEn Semiconductors BUJ403A/DG,127 applications of single BJT transistors.