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JANTX2N4150

JANTX2N4150

JANTX2N4150

Microsemi Corporation

JANTX2N4150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N4150 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/394
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A
Transition Frequency 15MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 10V
Turn Off Time-Max (toff) 2000ns
Turn On Time-Max (ton) 550ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.342000 $11.342
10 $10.700000 $107
100 $10.094340 $1009.434
500 $9.522962 $4761.481
1000 $8.983926 $8983.926
JANTX2N4150 Product Details

JANTX2N4150 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 5A 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V allows for a high level of efficiency.As a result, the part has a transition frequency of 15MHz.A maximum collector current of 10A volts is possible.

JANTX2N4150 Features


the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz

JANTX2N4150 Applications


There are a lot of Microsemi Corporation JANTX2N4150 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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