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TIP29AG

TIP29AG

TIP29AG

ON Semiconductor

TIP29AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP29AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP29
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 700mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.67000 $0.67
50 $0.53540 $26.77
100 $0.42840 $42.84
500 $0.33656 $168.28
1,000 $0.26007 $0.26007
TIP29AG Product Details

TIP29AG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 1A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 125mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).As a result, the part has a transition frequency of 3MHz.Breakdown input voltage is 25V volts.A maximum collector current of 1A volts is possible.

TIP29AG Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz

TIP29AG Applications


There are a lot of ON Semiconductor TIP29AG applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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