NSS20201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSS20201LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
540mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
NSS20201
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
540mW
Power - Max
460mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
100mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
4mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.430003
$0.430003
10
$0.405663
$4.05663
100
$0.382701
$38.2701
500
$0.361039
$180.5195
1000
$0.340602
$340.602
NSS20201LT1G Product Details
NSS20201LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.As it features a collector emitter saturation voltage of 4mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 100mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 20V volts.During maximum operation, collector current can be as low as 2A volts.
NSS20201LT1G Features
the DC current gain for this device is 200 @ 500mA 2V a collector emitter saturation voltage of 4mV the vce saturation(Max) is 100mV @ 200mA, 2A the emitter base voltage is kept at 6V a transition frequency of 150MHz
NSS20201LT1G Applications
There are a lot of ON Semiconductor NSS20201LT1G applications of single BJT transistors.