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FZT696BTA

FZT696BTA

FZT696BTA

Diodes Incorporated

FZT696BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT696BTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 180V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT696
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 180V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 200mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 200mA
Collector Emitter Breakdown Voltage 180V
Transition Frequency 70MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 180V
Frequency - Transition 70MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.128989 $0.128989
10 $0.121688 $1.21688
100 $0.114800 $11.48
500 $0.108302 $54.151
1000 $0.102172 $102.172
FZT696BTA Product Details

FZT696BTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 200mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 200mA.A constant collector voltage of 500mA is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 70MHz is present in the part.The breakdown input voltage is 180V volts.When collector current reaches its maximum, it can reach 500mA volts.

FZT696BTA Features


the DC current gain for this device is 150 @ 200mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 200mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz

FZT696BTA Applications


There are a lot of Diodes Incorporated FZT696BTA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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