FZT696BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT696BTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
180V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT696
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
180V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 200mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 200mA
Collector Emitter Breakdown Voltage
180V
Transition Frequency
70MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
180V
Frequency - Transition
70MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
500mA
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.128989
$0.128989
10
$0.121688
$1.21688
100
$0.114800
$11.48
500
$0.108302
$54.151
1000
$0.102172
$102.172
FZT696BTA Product Details
FZT696BTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 200mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 5mA, 200mA.A constant collector voltage of 500mA is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 70MHz is present in the part.The breakdown input voltage is 180V volts.When collector current reaches its maximum, it can reach 500mA volts.
FZT696BTA Features
the DC current gain for this device is 150 @ 200mA 5V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 250mV @ 5mA, 200mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 70MHz
FZT696BTA Applications
There are a lot of Diodes Incorporated FZT696BTA applications of single BJT transistors.