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CXT3019 TR PBFREE

CXT3019 TR PBFREE

CXT3019 TR PBFREE

Central Semiconductor Corp

CXT3019 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CXT3019 TR PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface MountNO
Operating Temperature-65°C~175°C TJ
PackagingCut Tape (CT)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration Single
Power - Max 1.2W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Frequency - Transition 100MHz
Power Dissipation-Max (Abs) 1.2W
RoHS StatusROHS3 Compliant
In-Stock:8557 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.00000$1
500$0.99$495
1000$0.98$980
1500$0.97$1455
2000$0.96$1920
2500$0.95$2375

CXT3019 TR PBFREE Product Details

CXT3019 TR PBFREE Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).In the part, the transition frequency is 100MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.

CXT3019 TR PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz

CXT3019 TR PBFREE Applications


There are a lot of Central Semiconductor Corp CXT3019 TR PBFREE applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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