2SAR502UBTL Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -150mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.The emitter base voltage can be kept at -6V for high efficiency.Breakdown input voltage is 30V volts.A maximum collector current of 500mA volts is possible.
2SAR502UBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 10mA, 200mA
the emitter base voltage is kept at -6V
2SAR502UBTL Applications
There are a lot of ROHM Semiconductor 2SAR502UBTL applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
