BC68PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC68PA,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
420mW
Terminal Position
DUAL
Terminal Form
NO LEAD
Frequency
170MHz
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.65W
Case Connection
COLLECTOR
Power - Max
420mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
170MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.09540
$0.2862
BC68PA,115 Product Details
BC68PA,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 500mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.170MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.
BC68PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 600mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 170MHz
BC68PA,115 Applications
There are a lot of Nexperia USA Inc. BC68PA,115 applications of single BJT transistors.