PZTA44-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
PZTA44-G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
750mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
20MHz
Max Breakdown Voltage
400V
Frequency - Transition
20MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.108120
$0.10812
10
$0.102000
$1.02
100
$0.096226
$9.6226
500
$0.090780
$45.39
1000
$0.085641
$85.641
PZTA44-G Product Details
PZTA44-G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 10mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 5mA, 50mA.As a result, the part has a transition frequency of 20MHz.As a result, it can handle voltages as low as 400V volts.The maximum collector current is 200mA volts.
PZTA44-G Features
the DC current gain for this device is 50 @ 10mA 10V the vce saturation(Max) is 750mV @ 5mA, 50mA a transition frequency of 20MHz
PZTA44-G Applications
There are a lot of Comchip Technology PZTA44-G applications of single BJT transistors.