JANTX2N3735L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N3735L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-5
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/395
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
900mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1.5A
Collector Base Voltage (VCBO)
75V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$12.31650
$1231.65
JANTX2N3735L Product Details
JANTX2N3735L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 1A 1.5V DC current gain.When VCE saturation is 900mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-5 supplier package.The device exhibits a collector-emitter breakdown at 40V.In extreme cases, the collector current can be as low as 1.5A volts.
JANTX2N3735L Features
the DC current gain for this device is 20 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A the supplier device package of TO-5
JANTX2N3735L Applications
There are a lot of Microsemi Corporation JANTX2N3735L applications of single BJT transistors.