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JANTX2N3735L

JANTX2N3735L

JANTX2N3735L

Microsemi Corporation

JANTX2N3735L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3735L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Supplier Device Package TO-5
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/395
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 1W
Power - Max 1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1.5A
Collector Base Voltage (VCBO) 75V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $12.31650 $1231.65
JANTX2N3735L Product Details

JANTX2N3735L Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 1A 1.5V DC current gain.When VCE saturation is 900mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-5 supplier package.The device exhibits a collector-emitter breakdown at 40V.In extreme cases, the collector current can be as low as 1.5A volts.

JANTX2N3735L Features


the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the supplier device package of TO-5

JANTX2N3735L Applications


There are a lot of Microsemi Corporation JANTX2N3735L applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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