BD13510STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD13510STU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
1.25W
Current Rating
1.5A
Base Part Number
BD135
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11.2mm
Length
8.3mm
Width
3.45mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.145769
$10.145769
10
$9.571480
$95.7148
100
$9.029698
$902.9698
500
$8.518584
$4259.292
1000
$8.036400
$8036.4
BD13510STU Product Details
BD13510STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 50MHz.The maximum collector current is 1.5A volts.
BD13510STU Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1.5A a transition frequency of 50MHz
BD13510STU Applications
There are a lot of ON Semiconductor BD13510STU applications of single BJT transistors.