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BD13510STU

BD13510STU

BD13510STU

ON Semiconductor

BD13510STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD13510STU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation1.25W
Current Rating1.5A
Base Part Number BD135
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.25W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 11.2mm
Length 8.3mm
Width 3.45mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12846 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.145769$10.145769
10$9.571480$95.7148
100$9.029698$902.9698
500$8.518584$4259.292
1000$8.036400$8036.4

BD13510STU Product Details

BD13510STU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 50MHz.The maximum collector current is 1.5A volts.

BD13510STU Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz

BD13510STU Applications


There are a lot of ON Semiconductor BD13510STU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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