DZT2222A-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DZT2222A-13 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DZT2222A
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
35
Continuous Collector Current
600mA
Turn Off Time-Max (toff)
285ns
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$33.015214
$33.015214
10
$31.146428
$311.46428
100
$29.383423
$2938.3423
500
$27.720211
$13860.1055
1000
$26.151142
$26151.142
DZT2222A-13 Product Details
DZT2222A-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.A collector emitter saturation voltage of 1V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 300MHz.Input voltage breakdown is available at 40V volts.During maximum operation, collector current can be as low as 600mA volts.
DZT2222A-13 Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
DZT2222A-13 Applications
There are a lot of Diodes Incorporated DZT2222A-13 applications of single BJT transistors.