MPS4126RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MPS4126RLRAG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-200mA
Frequency
170MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPS4126
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625W
Power - Max
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
170MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
25V
Transition Frequency
170MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
-25V
Emitter Base Voltage (VEBO)
4V
hFE Min
120
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.07000
$0.07
500
$0.0693
$34.65
1000
$0.0686
$68.6
1500
$0.0679
$101.85
2000
$0.0672
$134.4
2500
$0.0665
$166.25
MPS4126RLRAG Product Details
MPS4126RLRAG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 1V DC current gain.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 170MHz in the part.Breakdown input voltage is 25V volts.Collector current can be as low as 200mA volts at its maximum.
MPS4126RLRAG Features
the DC current gain for this device is 120 @ 2mA 1V a collector emitter saturation voltage of -400mV the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at 4V the current rating of this device is -200mA a transition frequency of 170MHz
MPS4126RLRAG Applications
There are a lot of ON Semiconductor MPS4126RLRAG applications of single BJT transistors.