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MPS4126RLRAG

MPS4126RLRAG

MPS4126RLRAG

ON Semiconductor

MPS4126RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPS4126RLRAG Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 170MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MPS4126
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625W
Power - Max 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 170MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage -400mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) -25V
Emitter Base Voltage (VEBO) 4V
hFE Min 120
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.07000 $0.07
500 $0.0693 $34.65
1000 $0.0686 $68.6
1500 $0.0679 $101.85
2000 $0.0672 $134.4
2500 $0.0665 $166.25
MPS4126RLRAG Product Details

MPS4126RLRAG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 1V DC current gain.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 170MHz in the part.Breakdown input voltage is 25V volts.Collector current can be as low as 200mA volts at its maximum.

MPS4126RLRAG Features


the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 170MHz

MPS4126RLRAG Applications


There are a lot of ON Semiconductor MPS4126RLRAG applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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