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2N2484UB

  • 2N2484UB
  • 2N2484UB

2N2484UB

2N2484UB

Microsemi Corporation

2N2484UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N2484UB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code 8541.21.00.95
Subcategory Other Transistors
Max Power Dissipation 360mW
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power - Max 360mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 225 @ 10mA 5V
Current - Collector Cutoff (Max) 2nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 100μA, 1mA
Collector Emitter Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $15.70800 $1570.8
2N2484UB Product Details

2N2484UB Overview


This device has a DC current gain of 225 @ 10mA 5V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100μA, 1mA.A maximum collector current of 50mA volts can be achieved.

2N2484UB Features


the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA

2N2484UB Applications


There are a lot of Microsemi Corporation 2N2484UB applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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