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C3M0120090J

C3M0120090J

C3M0120090J

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 155mOhm @ 15A, 15V +18V, -8V 350pF @ 600V 17.3nC @ 15V 900V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

SOT-23

C3M0120090J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Number of Pins 7
Supplier Device Package D2PAK-7
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Series C3M™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 15V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +18V, -8V
Continuous Drain Current (ID) 22A
Threshold Voltage 2.1V
Drain to Source Resistance 120mOhm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.554586 $10.554586
10 $9.957156 $99.57156
100 $9.393544 $939.3544
500 $8.861834 $4430.917
1000 $8.360221 $8360.221
C3M0120090J Product Details

C3M0120090J Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 350pF @ 600V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).This device has a drain-to-source resistance of 120mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.In this case, the threshold voltage of the transistor is 2.1V, which means that it will not activate any of its functions when its threshold voltage reaches 2.1V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (15V), this device contributes to a reduction in overall power consumption.

C3M0120090J Features


a continuous drain current (ID) of 22A
single MOSFETs transistor is 120mOhm
a threshold voltage of 2.1V
a 900V drain to source voltage (Vdss)


C3M0120090J Applications


There are a lot of Cree/Wolfspeed
C3M0120090J applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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