MJB42CT4G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 600mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-6A).As you can see, the part has a transition frequency of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.A maximum collector current of 6A volts is possible.

MJB42CT4G Features

the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz

MJB42CT4G Applications

There are a lot of ON Semiconductor MJB42CT4G applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting