FJPF13007H1TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJPF13007H1TTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
40W
Frequency
4MHz
Base Part Number
FJPF13007
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
5
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.626057
$0.626057
10
$0.590620
$5.9062
100
$0.557189
$55.7189
500
$0.525650
$262.825
1000
$0.495896
$495.896
FJPF13007H1TTU Product Details
FJPF13007H1TTU Overview
This device has a DC current gain of 15 @ 2A 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 2A, 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.4MHz is present in the transition frequency.A maximum collector current of 8A volts can be achieved.
FJPF13007H1TTU Features
the DC current gain for this device is 15 @ 2A 5V the vce saturation(Max) is 3V @ 2A, 8A the emitter base voltage is kept at 9V a transition frequency of 4MHz
FJPF13007H1TTU Applications
There are a lot of ON Semiconductor FJPF13007H1TTU applications of single BJT transistors.