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FJPF13007H1TTU

FJPF13007H1TTU

FJPF13007H1TTU

ON Semiconductor

FJPF13007H1TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF13007H1TTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 40W
Frequency 4MHz
Base Part Number FJPF13007
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 5
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.626057 $0.626057
10 $0.590620 $5.9062
100 $0.557189 $55.7189
500 $0.525650 $262.825
1000 $0.495896 $495.896
FJPF13007H1TTU Product Details

FJPF13007H1TTU Overview


This device has a DC current gain of 15 @ 2A 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 2A, 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.4MHz is present in the transition frequency.A maximum collector current of 8A volts can be achieved.

FJPF13007H1TTU Features


the DC current gain for this device is 15 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

FJPF13007H1TTU Applications


There are a lot of ON Semiconductor FJPF13007H1TTU applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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