BC847BMB,315 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.The maximum collector current is 100mA volts.

BC847BMB,315 Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847BMB,315 Applications

There are a lot of Nexperia USA Inc. BC847BMB,315 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting