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DXT3904-13

DXT3904-13

DXT3904-13

Diodes Incorporated

DXT3904-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT3904-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.270880 $5.27088
10 $4.972528 $49.72528
100 $4.691064 $469.1064
500 $4.425532 $2212.766
1000 $4.175031 $4175.031
DXT3904-13 Product Details

DXT3904-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A transition frequency of 300MHz is present in the part.This device can take an input voltage of 40V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

DXT3904-13 Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

DXT3904-13 Applications


There are a lot of Diodes Incorporated DXT3904-13 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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