2DB1132P-13 Overview

In this device, the DC current gain is 82 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 190MHz.A breakdown input voltage of 32V volts can be used.The maximum collector current is 1A volts.

2DB1132P-13 Features

the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 190MHz

2DB1132P-13 Applications

There are a lot of Diodes Incorporated 2DB1132P-13 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter